LEDs for photographic applications

Notes about AXT

AXT offers a series of die that are spaced about every 10 nm from 450 to 540 nm. That is pretty attractive. Power is about 10mw at 540 -- upwards of 40mw at 450. This is a large die... 1200 microns square.

http://www.axt.com/led/pdf/LE-P2_Rev_A5.pdf

U.S. Sales Office
2019 Saturn Street
Monterey Park, CA 91754. USA.
Tel: (323)-278-0820
Fax: (323)-838-0653
email: led.sales@axt.com

Firms in the blue-LED market

AXT; Cree; United Epitaxy; Lite-On; GELcore; Vishay Intertechnology; Matsushita; Stanley Electric; Epistar; OptoTech; Arima; VPEC; Nitronex; Nichia Chemical Ind; Osram Optoelectronics; Agilent; Toyoda Gosei; Uniroyal; Rohm Electronics; SEI.

Notes about CREE
Cree is unusual in that it is a truly vertically integrated supplier: from wafers and devices to full-colour LED-based electronic displays and modules (through its wholly owned subsidiary Real Color Displays).

Cree's Real Color Displays brand is marketed under the Osram name and Osram accounted for 35% of Cree's revenues in 1999.

Their X-Bright part is among the market leaders. They have a 550 nm gap in their lineup.

Blue die from Oriol

http://www.oriolinc.com is a GaN fab house that produces several high brightness blue die. They do not specify who their packagers are.

They offer a family of die at 450, 460, and 470 nm

Who are the major players?

The high-brightness LED market is served by a number of large established suppliers as well as several smaller emerging ones. Dominating the market for blue, green, and white LEDs based on indium gallium nitride (InGaN) are Nichia Corporation, Toyoda Gosei, Cree, and OSRAM Opto Semiconductors. The major suppliers of yellow, orange, and red LEDs based on indium gallium aluminum phosphide (InGaAlP) are Agilent Technologies and LumiLeds Lighting (Agilent's joint-venture partner with Philips Lighting), OSRAM Opto Semiconductors, Toshiba, and Taiwanese chip suppliers UEC and Epistar. Other major players on the world market include Stanley Electric, Matsushita Electric, Sharp, and Citizen Electronics. The emergence of newer suppliers such as AXT, Uniroyal Optoelectronics, and a number of Taiwanese start-ups will make the competitive picture even more interesting in years to come.

Candidate Devices at or near 550 nm(Pure Green) and 450 nm (Deep Blue)

Toshiba TLxE1005B SMT LEDs: TLPGE1005B 562 nm. 130 mcd at 20 ma


Cotco TOPLED SMT LEDs: LM1-PWH1-01 465 nm. 450 mcd at 20ma

Discussion of semiconductor technologies


http://www.marktechopto.com/techref/reference_details.cfm?trd=2

This is an excellent discussion, talking about the evolution of parts from
"plain old" gallium arsenide to the huge range of materials used today.

The major technologies for LEDs include...

Gallium Arsenide
Gallium Aluminum Arsenide
Covers IR and red. Super bright reds tend to be GaAIAs/GaAs -- (Gallium Aluminum Arsenide/Gallium Aluminum Arsenide)

Gallium Phosphide
Indium Gallium Aluminum Phosphide
Gallium Arsenic Phosphide

The spectrum from orange through green is dominated by InGaAlP - Indium Gallium Aluminum Phosphide

Gallium Nitride
SiC/GaN - Silicon Carbide / Gallium Nitride

From traffic green through UV is dominated by Gallium Nitride parts.

Another useful color chart is available at
http://www.theledlight.com/technical3.html

This chart is similar to the ledtronics chart, but contains additional spectrum and chromicity information.

A useful color chart showing the color ranges of LEDs and the corresponding semiconductor technology is available on the ledtronics web site...

http://www.ledtronics.com/datasheets/Pages/led_color_chart/38.htm
LED Color Chart
click here to access pdf file of this page

LEDtronics
Code
LED Chip Code Wavelength
(nm) Color Name
Fwd Voltage
(Vf @ 20ma) Intensity
5mm LEDs Viewing
Angle LED Dye Material

941 IR IR941 940 Infrared 1.5 16mW
@50mA 15° GaAIAs/GaAs -- Gallium Aluminum Arsenide/Gallium Arsenide
881 IR IR881 880 Infrared 1.7 18mW
@50mA 15° GaAIAs/GaAs -- Gallium Aluminum Arsenide/Gallium Arsenide
851 IR IR851 850 Infrared 1.7 26mW
@50mA 15° GaAIAs/GaAs -- Gallium Aluminum Arsenide/Gallium Aluminum Arsenide
0UR R3KF 660 Ultra Red 1.8 2000mcd
@50mA 15° GaAIAs/GaAlAs -- Gallium Aluminum Arsenide/Gallium Aluminum Arsenide
00R R3/R4/R5 635 High Eff. Red 2.0 200mcd @20mA 15° GaAsP/GaP - Gallium Arsenic Phosphide / Gallium Phosphide
0ER E3K 633 Super Red 2.2 3500mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
0UO O3K/O6K 620 Super Orange 2.2 4500mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
0UO O3KF 612 Super
Orange 2.2 6500mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
00O O4/O5 605 Orange 2.1 160mcd @20mA 15° GaAsP/GaP - Gallium Arsenic Phosphide / Gallium Phosphide
0UY Y3KF 595 Super Yellow 2.2 5500mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
0PY Y3KH 592 Super Pure
Yellow 2.1 7000mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
00Y Y3/Y4/Y5 585 Yellow 2.1 100mcd @20mA 15° GaAsP/GaP - Gallium Arsenic Phosphide / Gallium Phosphide
0IW IW2K 4500K "Incan-
descent"
White 3.6 2000mcd
@20mA 20° InGaN - Indium Gallium Nitride
0PW PW4K 6500K Pale
White 3.6 4000mcd
@20mA 20° InGaN - Indium Gallium Nitride
0CW CW6K 8000K Cool White 3.6 6000mcd
@20mA 20° InGaN - Indium Gallium Nitride
0LY LY1K 574 Super
Lime Yellow 2.4 1000mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
0UG G1K 570 Super
Lime Green 2.0 1000mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
00G G3/G4/G5 565 High
Efficiency
Green 2.1 200mcd
@20mA 15° GaP/GaP - Gallium Phosphide/Gallium Phosphide
UPG PG350 560 Super
Pure Green 2.1 350mcd
@20mA 15° InGaAIP - Indium Gallium Aluminum Phosphide
0PG PG5 555 Pure Green 2.1 80mcd
@20mA 15° GaP/GaP - Gallium Phosphide/ Gallium Phosphide
0AG AG10K 525 Aqua Green 3.5 10,000mcd
@20mA 15° InGaN - Indium Gallium Nitride
0BG BG2K 505 Blue Green 3.5 2000mcd
@20mA 45° InGaN - Indium Gallium Nitride
0PB PB3K 470 Super Blue 3.6 3000mcd
@20mA 15° InGaN - Indium Gallium Nitride
00B UB500 430 Ultra Blue 3.8 100mcd
@20mA 15° SiC/GaN - Silicon Carbide / Gallium Nitride
405 uv UV405 405 Ultra
Violet 3.7 360mcd
@20mA 12° SiC/GaN - Silicon Carbide / Gallium Nitride
395 uv UV395 395 Ultra
Violet 3.7 306mcd
@20mA 12° SiC/GaN - Silicon Carbide / Gallium Nitride
750 uv UV750 370 Ultra
Violet 3.9 750µW
@10mA 10° GaN - Gallium Nitride


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